INFRARED RAMAN-SCATTERING AS A SENSITIVE PROBE FOR THE THERMAL-CONDUCTIVITY OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS

Citation
E. Worner et al., INFRARED RAMAN-SCATTERING AS A SENSITIVE PROBE FOR THE THERMAL-CONDUCTIVITY OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS, Applied physics letters, 68(11), 1996, pp. 1482-1484
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
11
Year of publication
1996
Pages
1482 - 1484
Database
ISI
SICI code
0003-6951(1996)68:11<1482:IRAASP>2.0.ZU;2-L
Abstract
The infrared Raman spectrum of chemical vapor deposited (CVD) diamond films has been correlated with the in-plane thermal conductivity of th e films. The scattering strength of the 1332 cm(-1) zone-center phonon line of diamond, measured relative to the intensity of the nondiamond carbon phase, was found to increase strongly with increasing thermal conductivity. A good correlation between these two properties was foun d even for the highest quality CVD diamond films with peak thermal con ductivities up to 54 W/cm K. The dependence of the peak thermal conduc tivity on the intensity of the 1332 cm(-1) phonon line normalized to t he scattering strength of the nondiamond carbon phase can be described by a power law with an exponent of 0.5. (C) 1996 American Institute o f Physics.