FABRICATION OF BORON-CARBIDE BORON HETEROJUNCTION DEVICES/

We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effec t transistor. Our results suggest that with respect to the approximate ly 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B 5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth do es not appear to be a requirement. (C) 1996 American Institute of Phys ics.