RECRYSTALLIZATION OF HIGH-ENERGY AS-IMPLANTED GAAS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY

Ion implantation damage and the regrowth process during thermal anneal ing of 2 MeV As-ion-implanted GaAs were studied by transmission electr on microscopy. With low-temperature annealing, a high denisty of stack ing faults was formed during the recrystallization process, but they w ere rarely observed with high-temperature annealing. At intermediate t emperatures, a much lower denisty of stacking faults was generated at the upper interface between the buried amorphous layer and the crystal than that at the lower interface, where a higher concentration of as- implanted arsenic exists. Based on the observed experimental results, an atomic model is proposed to explain the formation of stacking fault s induced by As clusters. (C) 1996 American Institute of Physics.