RESONANT RAMAN-SCATTERING FROM PHONONS IN GAAS (GAAS)(M)(ALAS)(N) QUANTUM-WIRE STRUCTURES/

Authors
MACIEL AC FREYLAND JM ROTA L KIENER C RYAN JF MARTI U MARTIN D MORIERGEMOUD F REINHART FK
Citation
Ac. Maciel et al., RESONANT RAMAN-SCATTERING FROM PHONONS IN GAAS (GAAS)(M)(ALAS)(N) QUANTUM-WIRE STRUCTURES/, Applied physics letters, 68(11), 1996, pp. 1519-1521
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
11
Year of publication
1996
Pages
1519 - 1521
Database
ISI
SICI code
0003-6951(1996)68:11<1519:RRFPIG>2.0.ZU;2-C
Abstract
Raman spectroscopy has been used to measure phonons in GaAs v-groove q uantum wire structures containing (001) and (111) GaAs/AlAs superlatti ce barrier regions. Resonance enhancement permits the identification o f modes in different regions of the structure, and the measured phonon frequencies provide structural information which shows clear evidence of GaAs migration during growth from (001) surfaces into the grooves. Confined and interface phonons with large in-(111) plane wavevectors are observed. (C) 1996 American Institute of Physics.