OPTICAL INVESTIGATIONS OF THE DYNAMIC BEHAVIOR OF GASB GAAS QUANTUM DOTS/

Time-resolved radiative recombination measurements on GaSb quantum dot s have been performed. The GaSb quantum dots are grown by molecular be am epitaxy on (100) GaAs through a self-assembly process. Time-resolve d measurements show that, after a rapid hole capture process, the phot oluminescence decays with a fast and a slow component. The fast compon ent is shortened significantly with higher excitation intensity while the slow component is roughly constant. The radiative lifetimes are mu ch longer than the lifetimes of ordinary GaSb quantum wells with a str addling band lineup. These results support a staggered band lineup and space charge induced band-bending model. (C) 1996 American Institute of Physics.