QUANTITATIVE-ANALYSIS OF RADIATION-INDUCED SI SIO2 INTERFACE DEFECTS BY MEANS OF MEV HE SINGLE-ION IRRADIATION/

Authors
KOH M SHIGETA B IGARASHI K MATSUKAWA T TANII T MORI S OHDOMARI I
Citation
M. Koh et al., QUANTITATIVE-ANALYSIS OF RADIATION-INDUCED SI SIO2 INTERFACE DEFECTS BY MEANS OF MEV HE SINGLE-ION IRRADIATION/, Applied physics letters, 68(11), 1996, pp. 1552-1554
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
11
Year of publication
1996
Pages
1552 - 1554
Database
ISI
SICI code
0003-6951(1996)68:11<1552:QORSSI>2.0.ZU;2-H
Abstract
Generation rates of Si/SiO2 interface defects, namely, the oxide trapp ed holes and the interface states, by MeV He single ion irradiation ha ve been investigated quantitatively. From the analysis of threshold vo ltage shifts induced by single ions of 2 MeV He, the number of the oxi de trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, re spectively. The hole trapping efficiency is almost 100% at the ion dos e below 1 ions/mu m(2). (C) 1996 American Institute of Physics.