C-AXIS ORIENTED FERROELECTRIC THIN-FILMS OF PBTIO3 ON SI BY PULSED-LASER ABLATION

Citation
Vr. Palkar et al., C-AXIS ORIENTED FERROELECTRIC THIN-FILMS OF PBTIO3 ON SI BY PULSED-LASER ABLATION, Applied physics letters, 68(11), 1996, pp. 1582-1584
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
11
Year of publication
1996
Pages
1582 - 1584
Database
ISI
SICI code
0003-6951(1996)68:11<1582:COFTOP>2.0.ZU;2-E
Abstract
We have deposited single phase c-axis oriented ferroelectric thin film s of PbTiO3 on Si(100) by pulsed laser ablation technique in situ. It has been shown that the formation of a nonferroelectric, Pb2Ti2O6 pyro chlore phase at the interface could be avoided by raising the substrat e temperature. (C) 1996 American Institute of Physics.