PLANAR AND CHANNEL WAVE-GUIDE FABRICATION IN LIB3O5 USING MEV HE-IMPLANTATION( ION)

Citation
Gm. Davis et al., PLANAR AND CHANNEL WAVE-GUIDE FABRICATION IN LIB3O5 USING MEV HE-IMPLANTATION( ION), Journal of applied physics, 79(6), 1996, pp. 2863-2867
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
79
Issue
6
Year of publication
1996
Pages
2863 - 2867
Database
ISI
SICI code
0021-8979(1996)79:6<2863:PACWFI>2.0.ZU;2-U
Abstract
Multiple energy He+ ion implantation to increase the width of the impl antation-induced refraction index barrier in LiB3O5 (LBO) is reported. Improvements in planar waveguide transmission (coupling and propagati on) at the HeNe laser wavelength of 633 nm, from 5% to 45% for TE pola rized light, and from 10% to 28% for TM polarized light in a similar t o 5-mm-long LBO planar waveguide are shown. Annealing is found to incr ease the transmission (coupling and propagation) at the wavelength of 633 nm of multiple-energy implanted planar LBO waveguides by as much a s 24% for TE polarized light and 71% for TM polarized light. Channel w aveguides in LBO fabricated by multiple-energy ion implantation throug h a gold wire mask and their use for second-harmonic generation are re ported. (C) 1996 American Institute of Physics.