Optical gain in quantum wire (QWI) lasers are theoretically investigat
ed as functions of wire crystallographic direction taking valence band
anisotropy into account. Calculations for GaAs cylindrical QWI with i
nfinite barriers are performed by using the 4X4 Luttinger-Kohn Hamilto
nian. Considering the structural optimization of QWI lasers from the v
iewpoint of crystallographic direction, we find that a [111]-QWI laser
s is the most suitable low-threshold laser and that a [1,-1,0]-QWI las
er on a (110) substrate is the most suitable polarization-stabilized v
ertical-cavity surface-emitting laser. (C) 1996 American Institute of
Physics.