Sf. Shayesteh et al., FAR-INFRARED SPECTRA OF REFLECTIVITY, TRANSMISSION AND HOT-HOLE EMISSION IN P-DOPED GAAS AL0.5GA0.5AS MULTIPLE-QUANTUM WELLS/, Semiconductor science and technology, 11(3), 1996, pp. 323-330
Far-infrared reflectivity and transmission spectra have been measured
for p-doped GaAs/Al0.5Ga0.5As multiple quantum wells (MQWs) using pola
rized oblique-incidence Fourier transform spectroscopy (FTS). Theoreti
cal calculations have been performed within a bulk slab effective-medi
um scheme, modified to include an anisotropic plasma response in the w
ells, and successfully compared with the experimental data. The optics
of the observed features are discussed, with particular reference to
interference modes. Far-infrared intersubband absorption at 80 cm(-1)
was observed by Brewster's angle (theta = 73 degrees) transmission mea
surements. Furthermore, we present the first observation of far-infrar
ed emission by two-dimensional hot holes in MQWs due to heating of hol
es by a longitudinal electric field applied along the layers. The obse
rved emission energies are attributed to direct transition of hot hole
s between subbands of the valence band due to size quantization.