MONTE-CARLO ANALYSIS OF A SCHOTTKY DIODE WITH AN AUTOMATIC SPACE-VARIABLE CHARGE ALGORITHM

An efficient one-dimensional ensemble Monte Carte simulator that impro ves the study of carrier transport by including a space-variable charg e algorithm has been developed. The algorithm is automatically impleme nted in regions with remarkable concentration gradients. In this way i s possible to study devices in which the carrier concentration varies by several orders of magnitude along the device and/or when we are int erested in the population of states rarely occupied by the carriers (t ails of distribution functions, hot electrons, etc) without excessive CPU requirements. In the present work this technique is used to study a Schottky barrier diode over a wide range of forward bias (80-800 mV) . In particular, the exponential behaviour of the current-voltage char acteristic, the agreement of this with the experimental results, the d istribution function and the recombination velocity of carriers close to the metal-semiconductor interface confirm the validity of the imple mented algorithm.