THE FLUENCE SPECTRUM ALLOWING THE FORMATION OF A CONNECTED BURIED SIO2 LAYER IN SILICON BY OXYGEN IMPLANTATION

Authors
CEROFOLINI GF BERTONI S MEDA L SPAGGIARI C
Citation
Gf. Cerofolini et al., THE FLUENCE SPECTRUM ALLOWING THE FORMATION OF A CONNECTED BURIED SIO2 LAYER IN SILICON BY OXYGEN IMPLANTATION, Semiconductor science and technology, 11(3), 1996, pp. 398-409
Citations number
55
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
3
Year of publication
1996
Pages
398 - 409
Database
ISI
SICI code
0268-1242(1996)11:3<398:TFSATF>2.0.ZU;2-0
Abstract
The synthesis of a connected buried oxide (BOX) via oxygen implantatio n into silicon followed by high-temperature annealing is discussed. A theoretical scheme able to predict the fluence domain which allows the formation of a connected BOX is proposed. This scheme is validated in a few cases by studying the evolution with fluence of the buried Si-S iO2 interfaces. The BOX insulating quality is discussed in relation to fundamental factors as well as to technological constraints.