ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE PLASMA-DEPOSITED SILICON DIOXIDE - EFFECT OF THE OXYGEN TO SILANE FLOW RATIO

Authors
HERNANDEZ MJ GARRIDO J MARTINEZ J PIQUERAS J
Citation
Mj. Hernandez et al., ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE PLASMA-DEPOSITED SILICON DIOXIDE - EFFECT OF THE OXYGEN TO SILANE FLOW RATIO, Semiconductor science and technology, 11(3), 1996, pp. 422-426
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
3
Year of publication
1996
Pages
422 - 426
Database
ISI
SICI code
0268-1242(1996)11:3<422:EOEP>2.0.ZU;2-K
Abstract
Silicon dioxide layers have been deposited at 150 degrees C from elect ron cyclotron resonance plasma using pure oxygen and argon-diluted sil ane. The sign of the oxide charge depends on the flow ratio and also o n the post-deposition processing. In the post-metallization annealed l ayers, net negative charge densities as low as 1 x 10(10) q cm(-2) hav e been obtained in the best conditions. Most of the charge seems to be trapped at oxide centres and the measured mobile charge is negligible . Post-oxidation treatments did not anneal out the oxide traps but rel eased additional positive charge in the oxide.