EXPERIMENTAL-EVIDENCE FOR DX ENERGY-DISTRIBUTIONS IN DELTA-DOPED ALXGA1-XAS GAAS QUANTUM-WELL STRUCTURES/

Authors
ROBERTS JM HARRIS JJ ROBERTS C
Citation
Jm. Roberts et al., EXPERIMENTAL-EVIDENCE FOR DX ENERGY-DISTRIBUTIONS IN DELTA-DOPED ALXGA1-XAS GAAS QUANTUM-WELL STRUCTURES/, Semiconductor science and technology, 11(3), 1996, pp. 458-460
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
3
Year of publication
1996
Pages
458 - 460
Database
ISI
SICI code
0268-1242(1996)11:3<458:EFDEID>2.0.ZU;2-9
Abstract
We interpret the free-carrier loss observed in a series of highly Si d elta-doped AlxGa1-xAs/GaAs quantum well structures in terms of a model of DX centre formation which includes Coulomb interactions. Our inter pretation implies a strongly growth-dependent DX centre energy. The da ta allow investigation of the DX centre distribution between 214 and 2 49 meV, and confirm a considerably broadened DX centre density of stat es (greater than or equal to 35 meV).