Vs. Subrahmanyam et al., THERMAL EVOLUTION OF ALPHA-INDUCED DEFECTS AND HELIUM BUBBLES IN TANTALUM STUDIED BY POSITRON-ANNIHILATION, Journal of physics and chemistry of solids, 57(3), 1996, pp. 319-323
Helium-implanted tantalum, subjected to isochronal annealing treatment
, has been studied using positron annihilation technique. The defect e
volution prior to the bubble nucleation stage consists of the processe
s of coarsening of vacancy clusters to form voids and stabilization of
helium-filled voids up to about 900 degrees C. The helium decorating
the loops gets dissociated above 800 degrees C and the defects anneal
out upon further annealing up to 1000 degrees C. Between 800 degrees C
and 1000 degrees C, most of the helium-free voids anneal out but the
rest, mainly helium-decorated voids, transform into densely filled hel
ium bubbles above 950 degrees C. The properties of these helium bubble
s have been studied quantitatively from an analysis based on the posit
ron surface state model, which indicated the presence of over-pressuri
sed helium bubbles. In the post-nucleation stage the bubble radius inc
reases while the bubble concentration decreases with temperature, whic
h indicates the bubble growth.