SI C PHASES FROM THE IR LASER-INDUCED DECOMPOSITION OF SILACYCLOBUTANE AND 1,3-DISILACYCLOBUTANE/

CO2 laser-induced infrared multiphoton decomposition (IRMPD) and SF6 p hotosensitized decomposition (LPD) of silacyclobutane (SCB) and 1,3-di silacyclobutane (DSCB) in the gas phase results in the very efficient deposition of Si/C/H and SiC materials, and it is inferred that the pr ocess is dominated by formation of transient silene; silene rearrangem ent to methylsilylene; silene and methylsilylene dehydrogenation; and polymerization of SICHn (n < 4) species. The deposits are sensitive to oxygen. Decomposition and SIC formation are favoured with IRMPD exper iments conducted with high-energy fluxes. The laser technique is promi sing for low-temperature chemical vapour deposition of amorphous SiC.