STATIONARY SEMICONDUCTOR EQUATIONS MODELING AVALANCHE GENERATION

This paper is concerned with a mixed boundary value problem for the ba sic stationary semiconductor equations modeling the generation of char ged particles due to impact ionization (avalanche generation). We esta blish the existence of a weak solution to this boundary value problem under the assumption that the diffusion coefficients of electrons and holes are equal. The method of proof relies on approximating the gener ation term by bounded gradient nonlinearities. (C) 1996 Academic Press , Inc.