J. Frehse et J. Naumann, STATIONARY SEMICONDUCTOR EQUATIONS MODELING AVALANCHE GENERATION, Journal of mathematical analysis and applications, 198(3), 1996, pp. 685-702
This paper is concerned with a mixed boundary value problem for the ba
sic stationary semiconductor equations modeling the generation of char
ged particles due to impact ionization (avalanche generation). We esta
blish the existence of a weak solution to this boundary value problem
under the assumption that the diffusion coefficients of electrons and
holes are equal. The method of proof relies on approximating the gener
ation term by bounded gradient nonlinearities. (C) 1996 Academic Press
, Inc.