COLD-PHONON EFFECT ON ELECTRON HEATING IN GAAS

Authors
LANGOT P TOMMASI R VALLEE F
Citation
P. Langot et al., COLD-PHONON EFFECT ON ELECTRON HEATING IN GAAS, Solid state communications, 98(2), 1996, pp. 171-174
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
98
Issue
2
Year of publication
1996
Pages
171 - 174
Database
ISI
SICI code
0038-1098(1996)98:2<171:CEOEHI>2.0.ZU;2-R
Abstract
Heating of cold electrons is investigated in bulk GaAs at room tempera ture using a femtosecond high sensitivity absorption saturation techni que. The electron thermalization time is found to increase with the ph otoexcited carrier density in the range 5 x 10(15)-3 x 10(17) cm(-3). This effect is attributed to LO phonon underpopulation and is shown to be controlled by the LO phonon lifetime in agreement with a numerical simulation of the nonequilibrium carrier dynamics.