THZ FREQUENCY-CONVERSION IN INJECTION-LOCKED SEMICONDUCTOR-LASER OSCILLATORS

A complete model for evaluating frequency conversion due to highly non degenerate four-wave mixing in injection locked Fabry-Perot laser osci llators is presented which takes account of carrier density fluctuatio ns, very fast phenomena and propagation effects. Simplified analytical solutions are obtained in the mean field limit; they are particularly useful for stability analysis and lead to simple expressions that cha racterise the conversion spectra. Agreement with the results of the di stributed model is very satisfactory. Numerical results show good conv ersion gain up to the terahertz region and a complex behaviour of the frequency response near side resonances; in particular, controlled inj ection locking allows a wideband response to be achieved.