ELECTRON-BEAM EVAPORATION BROAD-BEAM METAL-ION SOURCE FOR MATERIAL MODIFICATIONS

Citation
Yc. Feng et al., ELECTRON-BEAM EVAPORATION BROAD-BEAM METAL-ION SOURCE FOR MATERIAL MODIFICATIONS, Review of scientific instruments, 67(3), 1996, pp. 924-926
Citations number
2
Categorie Soggetti
Physics, Applied","Instument & Instrumentation
ISSN journal
00346748
Volume
67
Issue
3
Year of publication
1996
Part
2
Pages
924 - 926
Database
ISI
SICI code
0034-6748(1996)67:3<924:EEBMSF>2.0.ZU;2-U
Abstract
This paper describes a new type of electron beam evaporation intense b eam current broad beam metal ion source. In this ion source, a focusin g electron beam is used to bombard and vaporize the metal and other so lid elements within the same chamber where the metal and solid element atoms are ionized by are discharge. It can operate with gaseous and s olid elements. Both pure or mixed ions with single or multiple charge states can also be extracted from this source. The performance and the characteristics of this source have tested. Ion beams of a series of elements, which include C, W, Ta, Mo, Cr, Ti, B, Cu, Ni, AI, Ar, N, et c., have been extracted, and the highest beam current is up to 90 mA. By using this ion beam bombardment, a good mixture between substrate a nd film was observed. Deposition rates as high as 25 Angstrom/s for Mo , 30 Angstrom/s for Ti, and 80 Angstrom/s for C have been obtained. Th e structure of the ion source and the experimental results will be pre sented in this paper. (C) 1996 American Institute of Physics.