INITIAL-STAGES IN THE GROWTH OF CARBON-FILMS PRODUCED IN AN AR-CH4-H-2 MICROWAVE-DISCHARGE - COMPOSITION AND SURFACE-LAYERS MORPHOLOGY

Citation
L. Thomas et al., INITIAL-STAGES IN THE GROWTH OF CARBON-FILMS PRODUCED IN AN AR-CH4-H-2 MICROWAVE-DISCHARGE - COMPOSITION AND SURFACE-LAYERS MORPHOLOGY, Applied physics letters, 68(12), 1996, pp. 1634-1636
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
12
Year of publication
1996
Pages
1634 - 1636
Database
ISI
SICI code
0003-6951(1996)68:12<1634:IITGOC>2.0.ZU;2-P
Abstract
X-ray photoelectron spectroscopy and atomic force microscopy are emplo yed in the characterization of the first stages in the growth of carbo n layers on a (001) Si substrate which is not scratched with diamond p owder before placing it in an Ar-2%CH4-H-2 plasma discharge. Results s how that the first layers could be formed in SiC grains where the carb on diamond particles nucleate. The high nucleation density of 1.10(9)- 5.10(9) nuclei. cm(-2) and the low aggregates density lead to a smooth surface. (C) 1996 American Institute of Physics.