Jh. Stathis, ELECTRICALLY DETECTED MAGNETIC-RESONANCE STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN THIN SIO2, Applied physics letters, 68(12), 1996, pp. 1669-1671
A spin-dependent trap-assisted tunneling current has been detected in
a thin (44.5 Angstrom) SiO2 film. An electron paramagnetic resonance s
ignal, obtained from the tunnel current, provides the first microscopi
c information regarding the identity of defects responsible for stress
-induced leakage currents in thin SiO2. The observed electrically dete
cted magnetic resonance spectrum is anisotropic and does not correspon
d to any of the commonly known defects in the Si/SiO2 system. The chan
ge in current is 2.4 +/- 0.3 X 10(-7) at resonance, which we explain i
n terms of a spin-dependent hopping process. Assuming that the signal
corresponds to traps in the oxide, we estimate sensitivity to similar
to 1 X 10(9) defects/cm(2). (C) 1996 American Institute of Physics.