PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS (VOL 66, PG 3304, 1995)

Authors
KROTKUS A MARCINKEVICIUS S JASINSKI J KAMINSKA M TAN HH JAGADISH C
Citation
A. Krotkus et al., PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS (VOL 66, PG 3304, 1995), Applied physics letters, 68(12), 1996, pp. 1735-1735
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
12
Year of publication
1996
Pages
1735 - 1735
Database
ISI
SICI code
0003-6951(1996)68:12<1735:PCLIGI>2.0.ZU;2-Q