A. Harwit et al., DIRECT MEASUREMENT OF THE INTERSUBBAND ELECTROOPTIC COEFFICIENT IN ASYMMETRIC MULTIPLE-QUANTUM WELLS, Superlattices and microstructures, 19(1), 1996, pp. 39-45
An extremely large electro-optic coefficient in asymmetric quantum wel
l systems has been inferred from optical rectification measurements. T
o date, however, a direct measurement of the electro-optic coefficient
in these materials has not been performed. We present a method the el
ectro-optic coefficient in an asymmetric quantum well system consistin
g of 30 Angstrom GaAs wells, 65 Angstrom Al(0.20)Ga(0.80)As step barri
ers, and 500 Angstrom Al(0.40)Ga(0.60)As barriers. The devices consist
of short waveguides with asymmetric quantum well cores. The waveguide
endfaces are polished to form Fabry-Perot cavities. Electrodes are de
posited running parallel to the waveguides to apply electric fields. T
he waveguides are analyzed using a Fourier transform infrared spectrom
eter. Interference fringes are observed in the reflected spectra at ro
om temperature. The fringe spacing yields the refractive index of the
material, while plots of the refractive index versus applied electric
held yield the electrooptic coefficient. Absorption measurements throu
gh these waveguides showed the characteristic polarization dependent i
ntersubband absorption. Because the electrodes appeared to be Schottky
like, a large voltage was applied across the device and the voltage a
cross the quantum wells was estimated from the device leakage current
and the current-voltage characteristics of a similar device structure
after scaling for length, area, and doping. There may be some uncertai
nty in this approximation. The maximum applied electric field is estim
ated to be 2.3 kV cm(-1). No anomalous effects were observed in the Fa
bry-Perot fringe pattern in the presence of this electric field, indic
ating the electro-optic coefficient in these waveguides is most likely
less than 0.9 nm V-1 over a wide wavelength range. Clearly, however,
measurements need to be performed at higher electric fields to accurat
ely measure the electro-optic coefficient. (C) 1996 Academic Press Lim
ited