Q-BAND INJECTION-LOCKED GUNN DIODE OSCILLATOR

Authors
ZHU XW CHEN YY HONG W
Citation
Xw. Zhu et al., Q-BAND INJECTION-LOCKED GUNN DIODE OSCILLATOR, International journal of infrared and millimeter waves, 17(3), 1996, pp. 527-533
Citations number
2
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied",Optics
Journal title
International journal of infrared and millimeter waves → ACNP
ISSN journal
01959271
Volume
17
Issue
3
Year of publication
1996
Pages
527 - 533
Database
ISI
SICI code
0195-9271(1996)17:3<527:QIGDO>2.0.ZU;2-U
Abstract
The configuration and performance of a Q-band injection-locked Gunn os cillator are presented whose outport is connected with a phase-locked reference source by a circulator. The output power of the oscillator i s more than 60mW at 46.1GHz. The single-sideband phase noise (SSB) is less than -71.7dBc/Hz offset 10kHz from the carrier, and the spectrum of clutter signal is less than -40dB.