PREPARATION AND CHARACTERIZATION OF PD NI THIN-FILMS FOR HYDROGEN SENSING/

Citation
Yt. Cheng et al., PREPARATION AND CHARACTERIZATION OF PD NI THIN-FILMS FOR HYDROGEN SENSING/, Sensors and actuators. B, Chemical, 30(1), 1996, pp. 11-16
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09254005
Volume
30
Issue
1
Year of publication
1996
Pages
11 - 16
Database
ISI
SICI code
0925-4005(1996)30:1<11:PACOPN>2.0.ZU;2-W
Abstract
To investigate a newly proposed hydrogen sensing method, Pd100-xNix (x = 8, 9, 12, 15) thin films are deposited on rough alpha-Al2O3 substra tes by electron beam evaporation in ultrahigh vacuum. The structure an d composition of the Pd/Ni films are studied by X-ray diffraction, ele ctron probe microanalysis, and scanning electron microscopy. At 22 deg rees C, the electrical resistance increases with increasing hydrogen c oncentration and the steady-state response to hydrogen in the presence of nitrogen is significantly larger than that of Pd/Ni thin-film sens ors reported in the literature. The sensor response time is typically several tens of seconds. The sensor can operate after exposure to air for more than half a year. Oxygen has little effect on sensor response time and steady-state response. Exposure to several percent of CO for several minutes can increase the sensor response time significantly. Several possible remedies for CO poisoning are proposed. The sensor se nsitivity decreases with increasing temperature, rendering the sensor insensitive above 100 degrees C.