COMPOSITIONAL DISORDERING OF AL0.3GA0.7AS GAAS SUPERLATTICES BY SOLID-PHASE REGROWTH/

Authors
KIM SK OH YT KANG TW HONG CY KIM TW
Citation
Sk. Kim et al., COMPOSITIONAL DISORDERING OF AL0.3GA0.7AS GAAS SUPERLATTICES BY SOLID-PHASE REGROWTH/, Physica status solidi. a, Applied research, 153(2), 1996, pp. 409-414
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
153
Issue
2
Year of publication
1996
Pages
409 - 414
Database
ISI
SICI code
0031-8965(1996)153:2<409:CDOAGS>2.0.ZU;2-D
Abstract
A solid phase regrowth method is used to investigate the compositional disordering of Al0.3Ga0.7As/GaAs superlattices grown by molecular bea m epitaxy. All of the metal-evaporated and annealed samples exhibit di sordering, and the magnitude of the disordering for a Al0.3Ga0.7As/GaA s superlattice increases as the number of interfaces increases. The re sults of the secondary ion mass spectroscopy show clearly an interdiff usion of the AlGaAs and GaAs layers, and a compositional disordering m echanism in Al0.3Ga0.7As/GaAs superlattices is presented.