X-RAY PHOTOELECTRON DIFFRACTION OF THE SILICON-DIAMOND INTERFACE

Natural diamond (100) surface, highly (100) oriented chemical vapour d eposited (CVD) diamond films, and interface layers between the silicon substrate and the CVD diamond are analysed by X-ray induced photoelec tron diffraction (XPD). Measured 2 pi patterns of natural diamond Cls emission at 964 eV are compared to single scattering cluster (SSC) cal culations. Excellent agreement is found and comparisons show that phot oelectron forward focusing is much less prominent in carbon solids tha n in previously studied, heavier elements. No orientation is observed for silicon evaporated on natural diamond and the interface shows no c arbide formation. After 8 min of oriented diamond growth in microwave plasma, XPD shows an (100) oriented SiC interface and a preferential o rientation of the microscopic crystals. SSC simulations confirm the pr esence of beta-SiC at the interface. It appears that the SiC interface is always oriented independent of the parameters used for the bias tr eatment.