PLASMA-ASSISTED CVD GROWTH OF HETEROEPITAXIAL SILICON-CARBIDE ON SILICON

Authors
THWAITES MJ REEHAL HS
Citation
Mj. Thwaites et Hs. Reehal, PLASMA-ASSISTED CVD GROWTH OF HETEROEPITAXIAL SILICON-CARBIDE ON SILICON, Physica status solidi. a, Applied research, 153(2), 1996, pp. 459-463
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
153
Issue
2
Year of publication
1996
Pages
459 - 463
Database
ISI
SICI code
0031-8965(1996)153:2<459:PCGOHS>2.0.ZU;2-R
Abstract
The reduced temperature growth of hetero-epitaxial beta-silicon carbid e on silicon (100) substrates has been investigated using the techniqu e of RF plasma-assisted chemical vapour deposition in the temperature range 600 to 1200 degrees C. Silane and ethylene were used as the prec ursor gases. The lowest temperature at which single crystal growth was obtained in this work is 900 degrees C. The conditions under which ep itaxial growth was obtained at this temperature are described.