TEMPERATURE-DEPENDENCE OF MAGNETORESISTANCE IN NEUTRON-IRRADIATED ANDUNIRRADIATED HIGH-RESISTIVITY P-TYPE SILICON

Citation
M. Yildirim et al., TEMPERATURE-DEPENDENCE OF MAGNETORESISTANCE IN NEUTRON-IRRADIATED ANDUNIRRADIATED HIGH-RESISTIVITY P-TYPE SILICON, Physica status solidi. a, Applied research, 153(2), 1996, pp. 473-480
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
153
Issue
2
Year of publication
1996
Pages
473 - 480
Database
ISI
SICI code
0031-8965(1996)153:2<473:TOMINA>2.0.ZU;2-A
Abstract
The temperature dependence of the transverse magnetoresistance in irra diated and unirradiated p-type Si is studied in the range from 120 to 290 K. The magnetoresistance coefficients for the unirradiated [001] a nd [110] samples increases with decreasing sample temperature in the r ange from 160 to 290 K, however, this behavior is reversed below 160 K . It is proposed that this reversal is due to the double injection eff ect. The magnetoresistance coefficient for the irradiated [001] sample increases with decreasing sample temperature in the range of 120 to 2 90 K and is greater than that for the unirradiated [001] sample. This result can be explained by increased scattering due to the increased n umber of defects produced by irradiation. On the other hand, the magne toresistance coefficient for the unirradiated [110] sample is found to be greater than that of the unirradiated [001] sample.