M. Yildirim et al., TEMPERATURE-DEPENDENCE OF MAGNETORESISTANCE IN NEUTRON-IRRADIATED ANDUNIRRADIATED HIGH-RESISTIVITY P-TYPE SILICON, Physica status solidi. a, Applied research, 153(2), 1996, pp. 473-480
The temperature dependence of the transverse magnetoresistance in irra
diated and unirradiated p-type Si is studied in the range from 120 to
290 K. The magnetoresistance coefficients for the unirradiated [001] a
nd [110] samples increases with decreasing sample temperature in the r
ange from 160 to 290 K, however, this behavior is reversed below 160 K
. It is proposed that this reversal is due to the double injection eff
ect. The magnetoresistance coefficient for the irradiated [001] sample
increases with decreasing sample temperature in the range of 120 to 2
90 K and is greater than that for the unirradiated [001] sample. This
result can be explained by increased scattering due to the increased n
umber of defects produced by irradiation. On the other hand, the magne
toresistance coefficient for the unirradiated [110] sample is found to
be greater than that of the unirradiated [001] sample.