TEMPERATURE-DEPENDENCE OF MAGNETORESISTANCE IN NEUTRON-IRRADIATED ANDUNIRRADIATED HIGH-RESISTIVITY P-TYPE SILICON

The temperature dependence of the transverse magnetoresistance in irra diated and unirradiated p-type Si is studied in the range from 120 to 290 K. The magnetoresistance coefficients for the unirradiated [001] a nd [110] samples increases with decreasing sample temperature in the r ange from 160 to 290 K, however, this behavior is reversed below 160 K . It is proposed that this reversal is due to the double injection eff ect. The magnetoresistance coefficient for the irradiated [001] sample increases with decreasing sample temperature in the range of 120 to 2 90 K and is greater than that for the unirradiated [001] sample. This result can be explained by increased scattering due to the increased n umber of defects produced by irradiation. On the other hand, the magne toresistance coefficient for the unirradiated [110] sample is found to be greater than that of the unirradiated [001] sample.