GROWTH OF GALLIUM OXIDE THIN-FILMS FROM GALLIUM ACETYLACETONATE BY ATOMIC LAYER EPITAXY

Gallium oxide thin films have been deposited by atomic layer epitaxy ( ALE) using Ga(acac)(3) (acac = pentane-2,4-dionate) and either water o r ozone as precursors. Films were grown on silicon (100), soda lime an d Coming glass substrates. The influence of the deposition parameters (e.g. pulse duration, growth and source temperatures) on film growth w ere studied and by a proper choice of the parameters a self-controlled growth was demonstrated around 370 degrees C. Spectrophotometry, X-ra y diffraction (XRD), Rutherford back-scattering spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) were used to determine the ref ractive index, thickness, crystallinity and stoichiometry of the films . All the films were amorphous and highly uniform with only small thic kness variations. The films deposited with water contained a considera ble amount of carbon as an impurity whereas ozone as an oxidizer gave stoichiometric Ga2O3 films.