X-RAY RESPONSE OF STJ DETECTORS USING NBN ABSORBING LAYERS

Authors
PARLATO L PELUSO G PEPE G DIUCCIO US CRISTIANO R ESPOSITIO E FRUNZIO L PAGANO S AKOH H NAKAGAWA H TAKADA S GUTSCHE M KRAUS H
Citation
L. Parlato et al., X-RAY RESPONSE OF STJ DETECTORS USING NBN ABSORBING LAYERS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 370(1), 1996, pp. 95-97
Citations number
15
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
370
Issue
1
Year of publication
1996
Pages
95 - 97
Database
ISI
SICI code
0168-9002(1996)370:1<95:XROSDU>2.0.ZU;2-C
Abstract
We have designed and tested 5 x 5 mm(2) chips containing island type S TJs with different geometries, fabricated on Si substrates in the conf iguration Nb/Al-AlOx/Nb and using a NbN overlayer acting both as wirin g and radiation absorber. The aim is to investigate the advantages of the trapping effect due to the Nb layer trap. In fact, for the NbN/Nb bilayer the scattering time is much faster than the values calculated for other Nb based bilayers, leading to more efficient trapping proces ses. The junctions have been characterized by tunneling and Josephson current measurements down to 0.5 K. Experimental results concerning th e response of the devices under X-ray irradiation down to 60 mK are pr esented and discussed.