INTERPRETATION OF DC CURRENT-VOLTAGE CHARACTERISTICS OF TA(FOIL)AL-O-X-AL TUNNEL-JUNCTIONS ON THE BASIS OF A MODIFIED MCMILLANS MODEL OF THE PROXIMITY EFFECT

Citation
C. Patel et al., INTERPRETATION OF DC CURRENT-VOLTAGE CHARACTERISTICS OF TA(FOIL)AL-O-X-AL TUNNEL-JUNCTIONS ON THE BASIS OF A MODIFIED MCMILLANS MODEL OF THE PROXIMITY EFFECT, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 370(1), 1996, pp. 112-114
Citations number
3
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
370
Issue
1
Year of publication
1996
Pages
112 - 114
Database
ISI
SICI code
0168-9002(1996)370:1<112:IODCCO>2.0.ZU;2-M
Abstract
Al-O-x-Al superconducting tunnel junctions (STJs) have been photolitho graphically fabricated on a 350 micron thick Ta foil to investigate th e properties of the Al quasiparticle trap. The measured current-voltag e (I-V) characteristics are shown to be reasonably well fitted by usin g modified densities of states generated by McMillan's model of the pr oximity effect and by assuming a 24% normal metal component in the bas e Ta(foil)Al electrode.