HIGH-RESOLUTION X-RAY-DETECTION BY NB-BASED STJ AND 4-JFETS LOW-NOISEAMPLIFIER

Citation
M. Kishimoto et al., HIGH-RESOLUTION X-RAY-DETECTION BY NB-BASED STJ AND 4-JFETS LOW-NOISEAMPLIFIER, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 370(1), 1996, pp. 126-127
Citations number
4
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
370
Issue
1
Year of publication
1996
Pages
126 - 127
Database
ISI
SICI code
0168-9002(1996)370:1<126:HXBNSA>2.0.ZU;2-L
Abstract
We have made up a low noise charge sensitive amplifier with cooled 4-J FETs for a large area superconducting tunnel junction (STJ). These JFE Ts were operated at about 130 K. Each JFET (2SK190) dissipates about 1 5 mW. A high energy resolution of 73 eV for 5.9 keV X-rays and 61 eV f or pulser signals have been achieved with a 178 mu m X 178 178 mu m Nb /Al-AlOx/Al/Nb STJ having a junction capacitance of 1900 pF.