Sg. Chang et al., SUBSTANTIAL DIFFUSION OF ZR DURING SOLID-STATE AMORPHIZATION IN NI ZRMULTILAYERS/, Journal of materials science. Materials in electronics, 7(1), 1996, pp. 47-50
To examine the proposed model that amorphization is achieved by the mo
tion of one species only, Ni/Zr multilayers have been prepared by sput
ter deposition at a pressure of 1 Pa. The as-deposited specimen shows
the planar and sharp interface between Ni and Zr layers. The amorphous
phase is clearly observed at the residual Ni layers and around the vo
id edge in the Zr layer from the cross-sectional TEM images of the sam
ples annealed at 300 degrees C for 1 h. Composition analysis verifies
that considerable Zr diffusion occurs through the grain boundary in th
e Ni layer during the annealing. The activation energy for amorphizati
on is determined to be 1.17 eV per atom through a Kissinger-type analy
sis. This paper clearly shows the formation of amorphous NiZr alloys w
hen Zr diffusion is comparable to Ni diffusion.