PROCESS OPTIMIZATION AND RELATED MATERIAL PROPERTIES OF SILICON FILMSPRODUCED BY LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION FROM SILANE

Laser-induced chemical vapour deposition of silicon films on SiO2/Si ( 100) and Si (100) substrates was studied using ArF laser irradiation o f silane/argon gas mixture in parallel to the substrate. The optimal d eposition conditions were specified by examination of film morphology at a wide range of irradiation and process parameters. At optimal cond itions, specular films were obtained with no powder formation. The eff ect of deposition parameters, such as laser energy and repetition rate , on the deposition rate and the related film quality, was investigate d.