LONG-LIVED INTERMEDIATE STATE IN STRAIN-CONFINED QUANTUM DOTS

Citation
Yt. Gu et al., LONG-LIVED INTERMEDIATE STATE IN STRAIN-CONFINED QUANTUM DOTS, Superlattices and microstructures, 19(2), 1996, pp. 131-136
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
19
Issue
2
Year of publication
1996
Pages
131 - 136
Database
ISI
SICI code
0749-6036(1996)19:2<131:LISISQ>2.0.ZU;2-7
Abstract
We have studied carrier transfer to strain confined dots from a host q uantum well, using selectively excited time-resolved photoluminescence spectroscopy. We find that the photoluminescence decay rate after pic osecond excitation is much slower when excitation is indirect, via tra nsfer from the quantum well, then when it is directly into the dot, ev en though the decay of the quantum well photoluminescence is fast. Thi s result is inconsistent with a simple three level kinetic model of th e transfer process. We propose a tentative model involving an intermed iate nonradiative state, possibly the charge separated state predicted theoretically. (C) 1996 Academic Press Limited