STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANICCHEMICAL-VAPOR-DEPOSITION .4. 0.96 EV PHOTOLUMINESCENCE EMISSION

Authors
LIANG JC ZHAO JL GAO Y DOU K HUANG SH YU JQ GAO HK
Citation
Jc. Liang et al., STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANICCHEMICAL-VAPOR-DEPOSITION .4. 0.96 EV PHOTOLUMINESCENCE EMISSION, Journal of materials science letters, 15(3), 1996, pp. 189-191
Citations number
16
Categorie Soggetti
Material Science
Journal title
Journal of materials science letters → ACNP
ISSN journal
02618028
Volume
15
Issue
3
Year of publication
1996
Pages
189 - 191
Database
ISI
SICI code
0261-8028(1996)15:3<189:SODLIG>2.0.ZU;2-3