OBSERVATION OF A SHIFT OF THE MOBILITY THRESHOLD IN THE D--BAND OF SILICON IN AN ELECTRIC-FIELD ACCORDING TO THE PHOTOCONDUCTIVITY SPECTRA

Authors
MELNIKOV AP GURVICH YA SHESTAKOV LN GERSHENZON EM
Citation
Ap. Melnikov et al., OBSERVATION OF A SHIFT OF THE MOBILITY THRESHOLD IN THE D--BAND OF SILICON IN AN ELECTRIC-FIELD ACCORDING TO THE PHOTOCONDUCTIVITY SPECTRA, JETP letters, 63(2), 1996, pp. 100-106
Citations number
12
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
63
Issue
2
Year of publication
1996
Pages
100 - 106
Database
ISI
SICI code
0021-3640(1996)63:2<100:OOASOT>2.0.ZU;2-N
Abstract
We have discovered that the extrinsic photoconductivity spectrum of do ped, uncompensated crystalline Si at liquid-helium temperatures is qua litatively different in electric fields E above a critical value E(c). Specifically, the red edge of the photoconductivity, associated with photoionization of a neutral impurity, is shifted strongly to lower fr equencies. This result is explained by the appearance of a mobility th reshold in the D--band (upper Hubbard band) and the shift of this thre shold as E increases. (C) 1996 American Institute of Physics.