Fa. Chudnovskii et al., ELECTROFORMING AND SWITCHING IN OXIDES OF TRANSITION-METALS - THE ROLE OF METAL-INSULATOR-TRANSITION IN THE SWITCHING MECHANISM, Journal of solid state chemistry, 122(1), 1996, pp. 95-99
Electroforming and switching effects in sandwich structures based on a
nodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf,
Mo) have been studied. After being electroformed, some materials exhib
ited current-controlled negative resistance with S-shaped V-I characte
ristics. For V, Fe, Ti, and Nb oxides, the temperature dependences of
the threshold voltage have been measured. As the temperature increased
, V-th decreased to zero at a critical temperature T-0, which depended
on the film material. Comparison of the T-0 values with the temperatu
res of metal-insulator phase transition for some compounds (T-t = 120
K for Fe3O4, 340 K for VO2, similar to 500 K for Ti2O3, and 1070 K for
NbO2) showed that switching was related to the transition in the appl
ied electric held. Channels consisting of the above-mentioned lower ox
ides were formed in the initial anodic films during the electroforming
. The possibility of formation of these oxides with a metal-insulator
transition was confirmed by thermodynamic calculations. (C) 1996 Acade
mic Press, Inc.