Palladium thin films (220, 460 and 1350 Angstrom thick) were fabricate
d by physical vapor deposition and characterized electrochemically. Th
e reversible hydrogen storage capacity of the films was determined by
electrochemical cycling. The hydrogen solubility of the thin films was
larger in the alpha-phase but smaller in the beta-phase than that of
the bulk. The hydrogen diffusion coefficient, D-H, in the Pd films was
measured by the electrochemical stripping method in the Pd-H solid so
lution (a-phase) at the temperatures ranging from 280 to 330 K. A well
-defined potential range was found for applying the electrochemical st
ripping technique. The D-H decreases with decreasing film thickness an
d is 2-3 orders of magnitude smaller than that in the bulk. The D-H vs
1/T plots show that all the thin films follow the Arrhenius behavior,
D-H = D-0 exp(-E(a)/RT), with approximately the same activation energ
y E(a) and a decreasing prefactor D-H as the film thickness decreases.