BINDING-ENERGIES OF EXCITONS IN IONIC QUANTUM-WELL STRUCTURES

We have calculated the binding energies of excitons in quantum well st ructures based on ionic semiconductors by including the electron-hole interactions with the longitudinal-optical-phonon field. We have taken into account these interactions by using different effective interact ion potentials between the electron and the hole as derived by Haken, Aldrich and Bajaj, and Pollman and Buttner. We have calculated the bin ding energies of excitons in several ionic quantum well structures as functions of well width using these effective potentials following a v ariational approach. We find that the values of the exciton binding en ergies calculated using these potentials are always larger than those obtained using a Coloumb potential screened by static dielectric const ant.