EXCITON-STATES IN INXGA1-XAS GAAS DOUBLE-QUANTUM WELLS - NORMALIZED REFLECTION SPECTRAL/

Authors
DANDREA A TOMASSINI N FERRARI L RIGHINI M SELCI S BRUNI MR SIMEONI G
Citation
A. Dandrea et al., EXCITON-STATES IN INXGA1-XAS GAAS DOUBLE-QUANTUM WELLS - NORMALIZED REFLECTION SPECTRAL/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1423-1427
Citations number
3
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
17
Issue
11-12
Year of publication
1995
Pages
1423 - 1427
Database
ISI
SICI code
0392-6737(1995)17:11-12<1423:EIIGDW>2.0.ZU;2-H
Abstract
Normalized reflection spectra in GaInAs/GaAs quantum wells are shown f or two sets of samples with different alloy concentration (x = 9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples we re grown on (001)GaAs surface by Molecular Beam Epitaxy and characteri zed by RHEED and X-ray reflection diffraction. Exciton envelope functi on in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown its elf to be a well suited technique in order to study structural and ele ctronic properties of confined quantum structures.