RESONANT RAYLEIGH-SCATTERING IN SEMICONDUCTOR STRUCTURES

Authors
GURIOLI M BOGANI F VINATTIERI A COLOCCI M BELITSKY VI CANTARERO A PAVLOV ST
Citation
M. Gurioli et al., RESONANT RAYLEIGH-SCATTERING IN SEMICONDUCTOR STRUCTURES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1487-1492
Citations number
9
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
17
Issue
11-12
Year of publication
1995
Pages
1487 - 1492
Database
ISI
SICI code
0392-6737(1995)17:11-12<1487:RRISS>2.0.ZU;2-J
Abstract
A detailed study of the relative role played by localized and/or propa gating intermediate excitonic states in resonant Rayleigh scattering ( RRS) is presented for a large set of GaAs quantum well (QW) and bulk s tructures. We show that the two kinds of states contribute to RRS thro ugh different mechanisms. We conclude that RRS occurs via localized st ates in QW heterostructures, very likely due to localization by the in terface roughness, while bulk crystals turn out to be better candidate s for RRS via propagating states.