EXCITON PHOTON COUPLING IN GAAS BULK MICROCAVITIES

Citation
A. Tredicucci et al., EXCITON PHOTON COUPLING IN GAAS BULK MICROCAVITIES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1747-1751
Citations number
11
Categorie Soggetti
Physics
ISSN journal
03926737
Volume
17
Issue
11-12
Year of publication
1995
Pages
1747 - 1751
Database
ISI
SICI code
0392-6737(1995)17:11-12<1747:EPCIGB>2.0.ZU;2-6
Abstract
A great interest in the study of exciton-photon coupling in resonant o ptical media such as semiconductor microcavities is currently developi ng both in experiments and in theory. We investigate the spectral resp onse of a new semiconductor quantum system in which the cavity materia l itself is the active medium. If the Fabry-Perot quasi-mode is carefu lly tuned on the excitonic transition of the cavity bulk material, str ong exciton-photon coupling takes place and produces new features such as a Rabi-like splitting as large as that observed in quantum well mi crocavities and comparable optical absorption. In addition, the polari tonic spatial dispersion and the quantization of the centre-of-mass mo tion introduce remarkable fine structures which are absent in the quan tum well ease. We demonstrate the above effects from a spectroscopic a nalysis of GaAs cavities, using standard reflectance and photoluminesc ence techniques. The experimental results are further clarified with t heoretical calculations performed with an adapted transfer-matrix appr oach. The case of semi-cavities is finally considered and a new way to control the exciton-photon interaction in our system is achieved tail oring the photonic wave function with a change in the reflectivity pha se of the mirrors.