VACUUM RABI SPLITTING IN SEMICONDUCTOR MICROCAVITIES WITH APPLIED ELECTRIC AND MAGNETIC-FIELDS

Authors
WHITTAKER DM FISHER TA AFSHAR AM SKOLNICK MS KINSLER P ROBERTS JS HILL G PATE MA
Citation
Dm. Whittaker et al., VACUUM RABI SPLITTING IN SEMICONDUCTOR MICROCAVITIES WITH APPLIED ELECTRIC AND MAGNETIC-FIELDS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1781-1786
Citations number
9
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
17
Issue
11-12
Year of publication
1995
Pages
1781 - 1786
Database
ISI
SICI code
0392-6737(1995)17:11-12<1781:VRSISM>2.0.ZU;2-R
Abstract
We describe the use of measurements of vacuum Rabi splitting to extrac t values for the exciton oscillator strengths in In0.13Ga0.87As-GaAs a nd GaAs-Al0.2Ga0.8As quantum wells. By varying both field and temperat ure we determine the changes in the oscillator strength in applied ele ctric and magnetic fields. We show that these are in good agreement wi th the results of quantum well exciton calculations.