Dm. Whittaker et al., VACUUM RABI SPLITTING IN SEMICONDUCTOR MICROCAVITIES WITH APPLIED ELECTRIC AND MAGNETIC-FIELDS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1781-1786
We describe the use of measurements of vacuum Rabi splitting to extrac
t values for the exciton oscillator strengths in In0.13Ga0.87As-GaAs a
nd GaAs-Al0.2Ga0.8As quantum wells. By varying both field and temperat
ure we determine the changes in the oscillator strength in applied ele
ctric and magnetic fields. We show that these are in good agreement wi
th the results of quantum well exciton calculations.