Wwc. Quigley et al., INFRARED-SPECTROSCOPY AND TEMPERATURE-PROGRAMMED DESORPTION STUDY OF ADSORBED THIOPHENE ON GAMMA-AL2O3, Langmuir, 12(6), 1996, pp. 1500-1510
The adsorption of thiophene (C4H4S) On gamma-Al2O3 has been investigat
ed in ultrahigh vacuum (UHV) using infrared (IR) spectroscopy and temp
erature-programmed desorption(TPD). Following thiophene adsorption ont
o gamma-Al2O3 at 130 K, TPD reveals two peaks with maximum rates of de
sorption at 175 and similar to 220 K. The former peak is assigned to d
esorption of multilayer thiophene while the latter peak is assigned to
desorption of weakly chemisorbed thiophene from the alumina surface.
IR spectroscopy of adsorbed thiophene at submonolayer coverages provid
es further evidence that thiophene interacts only weakly with the alum
ina support; no decomposition of the thiophene overlayer is observed u
pon heating to 600 K under UHV conditions or a partial pressure of thi
ophene of 3.0 Torr. Three kinds of adsorbed thiophene species exist on
the alumina surface at saturation coverage: one in which thiophene in
teracts with hydroxyl groups, presumably via hydrogen bonding, a secon
d in which thiophene is coordinated via its sulfur atom to coordinatel
y unsaturated Al3+ sites on the surface, and a third species which is
present only at high thiophene coverages. The heat of adsorption for t
hiophene on gamma-Al2O3 has been determined under equilibrium conditio
ns (P-Th = 3.0 Torr) to be Delta H-ads = -28.9 kJ/mol. A direct correl
ation has been established between the IR and TPD data, permitting int
egrated extinction coefficients to be determined for adsorbed thiophen
e in both the monolayer and multilayer coverage regimes. Extinction co
efficients in the two coverage regimes are markedly different, undersc
oring the need to use care when interpreting the IR spectral intensiti
es for adsorbed species. While, as expected, this study has shown that
thiophene adsorbs only weakly on gamma-Al2O3, more importantly it has
shown that the combined IR-TPD methods can be used to determine both
the thiophene coverage and the mode of bonding with the surface.