MORPHOLOGICAL ANALYSIS OF NANOCRYSTALLINE SNO2 FOR GAS SENSOR APPLICATIONS

Citation
A. Dieguez et al., MORPHOLOGICAL ANALYSIS OF NANOCRYSTALLINE SNO2 FOR GAS SENSOR APPLICATIONS, Sensors and actuators. B, Chemical, 31(1-2), 1996, pp. 1-8
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09254005
Volume
31
Issue
1-2
Year of publication
1996
Pages
1 - 8
Database
ISI
SICI code
0925-4005(1996)31:1-2<1:MAONSF>2.0.ZU;2-G
Abstract
Structural and morphological analysis of nanocrystalline SnO2 for gas sensor applications were performed at different annealing conditions b y using nanopowders and thin nanocrystalline layers. The evolution of the grain size and the morphology of Pt doped tin dioxide nanoparticle s with increase of annealing temperature from 450 to 1000 degrees C we re analyzed by means of transmission electron microscopy (TEM), X-ray diffraction (XRD), and Fourier transform infrared (FTIR) and micro-Ram an spectroscopies. TEM shows that the average particle size increases, the size distribution becomes more spread out, and the grain faceting , as a mechanism of energy minimization, is more evident with increasi ng temperature. Furthermore, the shape of the particles changes with t he annealing temperature, which explains the results of the FTIR spect ra using the Theory of the Average Dielectric Constant (TADC). As temp erature increases, the Raman spectra are modified in agreement with a reduction of the crystalline defect concentration and a grain size inc rease. The thin nanocrystalline SnO2 layers, deposited on alpha-Al2O3 or on thermally oxidized Si substrates, have been annealed at 700 degr ees C for 8 h under different atmospheres, such as oxygen or synthetic air. TEM proves that the annealing atmosphere has a strong influence on the size and size distribution of the nanoparticles in the thin lay er. The main differences are found near the layer-substrate interface and are dependent on the annealing atmosphere as well as the nature of the substrate.