KINETICS OF DISORDER-ORDER TRANSITION OF TI-W OXIDE THIN-FILM SENSORS

Authors
DEPERO LE SORA IN PEREGO C SANGALETTI L SBERVEGLIERI G
Citation
Le. Depero et al., KINETICS OF DISORDER-ORDER TRANSITION OF TI-W OXIDE THIN-FILM SENSORS, Sensors and actuators. B, Chemical, 31(1-2), 1996, pp. 19-24
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
31
Issue
1-2
Year of publication
1996
Pages
19 - 24
Database
ISI
SICI code
0925-4005(1996)31:1-2<19:KODTOT>2.0.ZU;2-K
Abstract
The kinetics of structural changes of Ti-W oxide thin films has been s tudied by X-ray diffraction and Raman spectroscopy. The XRD patterns w ere measured after each annealing treatment. As the number of annealin g treatments increased, a progressive ordering of the as-grown amorpho us film was observed by XRD and confirmed by Raman measurements. An ex planation of the ordering is given in terms of segregation of Ti impur ities at the surface.