AMORPHOUS DIAMOND FILM BY ENHANCED ARE DEPOSITION

Citation
Bf. Coll et M. Chhowalla, AMORPHOUS DIAMOND FILM BY ENHANCED ARE DEPOSITION, Surface & coatings technology, 79(1-3), 1996, pp. 76-86
Citations number
36
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
79
Issue
1-3
Year of publication
1996
Pages
76 - 86
Database
ISI
SICI code
0257-8972(1996)79:1-3<76:ADFBEA>2.0.ZU;2-T
Abstract
A new type of nonhydrogenated diamond-like carbon film defined as amor phous diamond (a-D) can be deposited from Enhanced Are carbon source o n various substrate materials such as Si, high speed steel (HSS) and W C at room temperature. The role of evaporation and condensation of hig hly ionized carbon plasma has been investigated in this study. Experim ental results show that significant relationships exist between the en ergy distribution of the flux species, the particle surface interactio ns and the microstructure and mechanical properties of the a-D films. Films deposited in optimum conditions at growth rate of 6 mu m h(-1) e xhibit high hardness and Young's modulus, with peak values measured by the nanoindentation technique of around 95 GPa and 1150 GPa respectiv ely, approaching those of natural diamond. Furthermore, the specific p ossibility of the modified are technique compared with other physical vapor deposition processes leads to excellent adhesion on various subs trates. Scratch test measurements reveal values of 50 N-80 N on HSS an d WC substrates respectively.